We have developed multiple versions of PCB-based IPT and CPT coils for megahertz-frequency WPT. The parameters of these coils have been optimized using advanced algorithms to ensure high efficiency and low costs, tailored to specific requirements regarding resonant frequency, size, and materials.

Power Electronics

We are at the forefront of developing high-frequency, high-power AC-DC and DC-AC converters, as well as innovative switched-capacitor-based DC-DC converters featuring SIMO and MISO configurations. By leveraging cutting-edge wide-bandgap semiconductors and integrating advanced AI technologies, we are continuously pushing the boundaries of power converter design to enhance the performance and efficiency of power electronics systems.

AC-DC and DC-AC Converters

Device: GaN FET GS66508T (Infineon Tech.)

Specifications: 650V/50mΩ/30A

Power: 2.8kW@6.78MHz&300V

Efficiency: 98.1%

Parallel-GaN Inverter

Device: GaN FET GS66508T (Infineon Tech.)

Specifications: 650V/50mΩ/30A

Power: 2.8kW@6.78MHz&400V

Efficiency: 97.6%

GaN Inverter

Device: GaN FET GS66506T (Infineon Tech.)

Specifications: 650V/67mΩ/22.5A

Power: 2kW@6.78MHz&350V

Efficiency: 97.2%

Device: GaN TP65H070G4PS (Transphorm, Inc.)

Specifications: 650V/72mΩ/29A

Power: 2.2kW@6.78MHz&400V

Efficiency: 97.1%

GaN Inverter

Device: GaN TP65H070G4PS (Transphorm, Inc.)

Specifications: 650V/72mΩ/29A

Power: 2.2kW@6.78MHz&400V

Efficiency: 97.1%

GaN Inverter

Device: SiC C3M0060065K (Wolfspeed, Inc.)

Specifications: 650V/60mΩ/37A

Power: 4kW@4MHz&500V

Efficiency: 95.2%

SiC Inverter

SIMO and MISO DC-DC Converters

Device: MOSFET BSC009NE2LS5 (Infineon Technologies)

Specifications: 30V/0.9mΩ/100A

Power: 100W@100kHz&48V/4.2V

Efficiency: 92.26%

SIMO DC-DC Converter

Device: GaN MOSFET GS61008P (Infineon Technologies)

Specifications: 100V/7mΩ/90A

Power: 300W@1MHz&1V/48V

Efficiency: 91.73%

MISO DC-DC Converter